S6785G Просмотр технического описания (PDF) - Toshiba

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S6785G

SILICON PLANAR TYPE HIGH SPEED THYRISTOR

Toshiba 

TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE

S6785G

HIGH SPEED SWITCHING AND CONTROL

APPLICATIONS

S6785G

Unit: mm

MAXIMUM RATINGS

CHARACTERISTIC

Repetitive Peak Off−State Voltage

and Repetitive Peak Reverse Voltage

Non−Repetitive Peak Reverse

Voltage (Non−Repetitive <5ms,

Tj = 0~125°C)

Average On−State Current

(Half Sine Waveform)

R.M.S On−State Current

Peak One Cycle Surge On−State

Current (Non−Repetitive)

I2t Limit Value

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Voltage

Peak Reverse Gate Voltage

Peak Forward Gate Current

Junction Temperature

Storage Temperature Range

SYMBOL

VDRM

VRRM

VRSM

IT (AV)

IT (RMS)

ITSM

I2t

PGM

PG (AV)

VFGM

VRGM

IGM

Tj

Tstg

RATING

400

500

3

4.7

60 (50Hz)

66 (60Hz)

18

5

0.5

10

−6

2

−40~125

−40~125

UNIT

V

V

A

A

A

A2s

W

W

V

V

A

°C

°C

JEDEC

JEITA

TOSHIBA

Weight: 1.7 g

―

―

13−10H1B

1

2001-07-10

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