S16100BH Просмотр технического описания (PDF) - STMicroelectronics
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S16100BH Datasheet PDF : 5 Pages
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Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
S16xxxH
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
16
360 O
14
12
10
8
6
4
2
0
024
DC
o
= 1 80
= 120o
= 90o
= 60o
= 30o
IT(AV)(A)
6 8 10 12 14 16
P (W)
16
14
12
10
8
= 180o
6
4
2
Tamb (oC)
0
0 20 40 60
Tcase (oC)
-85
Rth = 0 o C/W
1o C/W
2o C/W
4o C/W -95
-105
-115
-125
80 100 120 140
Fig.3 : Average on-state current versus case tem-
perature.
I T(AV) (A)
20
18
DC
16
14
12
10
8
= 180o
6
4
2
Tcase (oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8
Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
20 0
15 0
Tj initial = 25oC
10 0
50
Number of cycles
0
1
10
10 0
100 0
3/5
®
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