S16100BH Просмотр технического описания (PDF) - STMicroelectronics

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S16100BH

SCR

STMicroelectronics 

S16xxxH

THERMAL RESISTANCES

Symbol

Parameter

Rth(j-a) Junction to ambient

Rth(j-c) Junction to case for DC

GATE CHARACTERISTICS (maximum values)

PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4A (tp = 20 µs)

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

IGT

VGT

VGD

tgt

IH

IL

VTM

IDRM

IRRM

dV/dt

tq

VD=12V (DC) RL=33Ω

Tj= 25°C MIN

MAX

VD=12V (DC) RL=33Ω

Tj= 25°C MAX

VD=VDRM RL=3.3kΩ

Tj= 125°C MIN

VD=VDRM ITM= 3 x IT(AV)

Tj= 25°C TYP

dIG/dt = 0.8A/µs IG = 90mA

IT= 250mA Gate open

Tj= 25°C MAX

IG=1.2 IGT

Tj= 25°C MAX

ITM= 32A tp= 380µs

Tj= 25°C MAX

VD = VDRM

VR = VRRM

Tj= 25°C MAX

Tj= 110°C MAX

VD=67%VDRM Gate open

Tj= 110°C MIN

ITM= 3 x IT(AV) VR=35V

dI/dt=25A/µs tp=100µs

dV/dt=25V/µs

VD= 67%VDRM

Tj= 110°C MAX

Value

60

2.2

Sensitivity

10

16

10

20

25

50

1.5

0.2

2

50

100

100

200

1.6

10

2

400

500

100

Unit

°C/W

°C/W

Unit

mA

V

V

µs

mA

mA

V

µA

mA

V/µs

µs

ORDERING INFORMATION

S

SCR MESA GLASS

CURRENT

2/5

16 16 M

SENSITIVITY

®

H

PACKAGE :

H = TO220 Non-insulated

VOLTAGE

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