GLT6100L08LL-100TC Просмотр технического описания (PDF) - G-Link Technology
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GLT6100L08LL-100TC Datasheet PDF : 10 Pages
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G-LINK
GLT6100L16
Ultra Low Power 64k x 16 CMOS SRAM
May 2000(Rev. 0.3)
Recommended Operating Conditions ( TA = -25°C to + 85°C** )
Parameter
Symbol
Min
Typ
Supply Voltage
VCC
2.7
3.0
Gnd
0.0
0.0
Input Voltage
VIH
2.2
-
VIL
-0.5*
-
* VIL min = -2.0V for pulse width less than tRC/2.
** For Industrial Temperature.
Max
3.3
0.0
VCC+0.5
0.6
Unit
V
V
V
V
DC Operating Characteristics ( Vcc=2.7 to 3.3V , TA =-25°C to + 85°C)
Parameter
Sym.
Test Conditions
55
Min Max
70
Min Max
85
Min Max
100
Min Max
Unit
Input Leakage Current
ILI VCC = Max,
Vin = Gnd to VCC
1
1
1
1 µA
Output Leakage
Current
Operating Power
Supply Current
ILO CE =VIH or VCC = Max,
1
1
1
1 µA
VOUT = Gnd to VCC
ICC
CE =VIL ,VIN=VIH or VIL, IOUT=0
3
3
3
3 mA
Average Operating
Current
ICC1 IOUT = 0mA,
Min Cycle, 100% Duty
ICC2
CE ≤ 0.2V
40
35
30
30 mA
3
3
3
3 mA
IOUT = 0mA,
Cycle Time=1µs, 100% = Duty
Standby Power Supply
Current(TTL Level)
ISB
CE =VIH
0.5
0.5
0.5
0.5 mA
Standby Power Supply
Current (CMOS Level)
ISB1
CE ≥ VCC-0.2V GLT6100L16LL
5
5
5
5 µA
VIN ≤ 0.2V or
VIN ≥ VCC-0.2V
GLT6100L16SL
1
1
1
1 µA
Output Low Voltage
Output High Voltage
VOL IOL = 2 mA
VOH IOH = -2 mA
0.4
0.4
0.4
0.4 V
2.4
2.4
2.4
2.4
V
Data Retention
Parameter
VCC for Data retention
Data Retention Current
Chip Deselect to Data Retention Time
Operating Recovery Time(2)
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
Sym.
VDR
ICCDR
tCDR
tR
Test Conditions
CE ≥ VCC -0.2V
VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
Min.
2.0
0
tRC
Max.
-
1
-
-
Unit
V
µA
ns
ns
-3-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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