HN58C65FP-25 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58C65FP-25

8192-word × 8-bit Electrically Erasable and Programmable CMOS ROM

Hitachi -> Renesas Electronics 

DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%)

Parameter

Symbol Min

Typ

Max

Unit

Input leakage current

I LI

—

—

2

µA

Output leakage current

I LO

—

—

2

µA

VCC current (Standby)

I CC1

—

—

1

mA

VCC current (Active)

I CC2

—

—

8

mA

—

—

25

mA

Input low voltage

VIL

–0.3*1

—

Input high voltage

VIH

2.2

—

Output low voltage

VOL

—

—

Output high voltage

VOH

2.4

—

Note: 1. –1.0 V for pulse width ≤ 50 ns

0.8

V

VCC + 1 V

0.4

V

—

V

HN58C65 Series

Test Conditions

VCC = 5.5 V

Vin = 5.5 V

VCC = 5.5 V

Vout = 5.5/0.4 V

CE = VIH, CE = VCC

Iout = 0 mA

Duty = 100%

Cycle = 1 µs at

VCC = 5.5 V

Iout = 0 mA

Duty = 100%

Cycle = 250 ns at

VCC = 5.5 V

IOL = 2.1 mA

IOH = –400 µA

Capacitance (Ta = 25°C, f = 1 MHz)

Parameter

Symbol Min

Typ

Max

Unit

Input capacitance*1

Cin

—

—

6

pF

Output capacitance*1

Cout

—

—

12

pF

Note: 1. This parameter is periodically sampled and not 100% tested.

Test Conditions

Vin = 0 V

Vout = 0 V

AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%)

Test Conditions

• Input pulse levels: 0.4 V to 2.4 V

• Input rise and fall time: ≤ 20 ns

• Output load: 1TTL gate + 100 pF

• Reference levels for measuring timing: 0.8 V and 2 V

5

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