BDX64C(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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BDX64C
(Rev.:2012)

PNP SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX64 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

VCEO(SUS)

ICEO

Collector-Emitter Breakdown

Voltage (*)

Collector Cutoff Current

IC=-0.1 A

IB=0

L=25mH

VCE=-30 V

VCE=-40 V

VCE=-50 V

VCE=-60 V

IEBO

Emitter Cutoff Current

VBE=-5 V

ICBO

VCE(SAT)

Collector-Base Cutoff Current

VCBO=-60 V

VCBO=-40 V

TCASE=200°C

VCBO=-80 V

VCBO=-50 V

TCASE=200°C

VCBO=-100 V

VCBO=-60 V

TCASE=200°C

VCBO=-120 V

VCBO=-70 V

TCASE=200°

Collector-Emitter saturation

Voltage (*)

IC=-5.0 A

IB=-20 mA

VF

Forward Voltage (pulse

method)

IF=5 A

VBE

Base-Emitter Voltage (*)

IC=-5.0 A

VCE=-3V

BDX64 -60 -

-

BDX64A -80 -

BDX64B -100 -

-

-

V

BDX64C -120 -

-

BDX64

-

-

BDX64A -

BDX64B -

-

-

-1.0 mA

BDX64C -

-

BDX64

BDX64A

BDX64B

-

- -5.0 mA

BDX64C

BDX64

-

- 0.2

-

-

2

-

BDX64A

-

-

BDX64B

-

- 0.2

-

2

-

- 0.2

-

2

-

- 0.2

BDX64C

-

-

2

BDX64

BDX64A

BDX64B

-

-

-2

V

BDX64C

BDX64

BDX64A

BDX64B

-

1.8

-

V

BDX64C

BDX64

BDX64A

BDX64B

-

- -2.5 V

BDX64C

24/10/2012

COMSET SEMICONDUCTORS

2|4

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