BDX64C(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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BDX64C Datasheet PDF : 4 Pages
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BDX64 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCEV
VEBO
IC
IB
PT
TJ
TS
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
VBE=-1.5 V
IC(RMS)
ICM
@ TC = 25°
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
-12
-16
0.2
117
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
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