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PSMN1R3-30YL Просмотр технического описания (PDF) - NXP Semiconductors.

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PSMN1R3-30YL Datasheet PDF : 14 Pages
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NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mlogic level MOSFET in LFPAK
10-1
ID
(A)
10-2
003aab271
min
typ
max
10-3
10-4
10-5
10-6
0
1
2 VGS (V) 3
2
a
03aa27
1.5
1
0.5
0
60
0
60
120 Tj (°C) 180
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Gate charge waveform definitions
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
003aad150
6
VDS = 12V
4
2
0
0
25
50
75
100
QG (nC)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
9 of 14

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