PSMN1R3-30YL Просмотр технического описания (PDF) - NXP Semiconductors.
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PSMN1R3-30YL Datasheet PDF : 14 Pages
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NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
104
C
(pF)
003aad151
Ciss
100
IS
(A)
75
003aad149
103
Coss
50
Crss
25
Tj = 150 °C
25 °C
102
10-1
1
10
102
VDS (V)
0
0
0.25
0.5
0.75
1
VSD (V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
10
RDS(on)
(mΩ)
7.5
VGS (V) = 2.6
003aad146
5
2.5
0
0
2.8
3
3.5
4.5
10
25
50
75
100
ID (A)
Fig 17. Drain-source on-state resistance as a function of drain current; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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