PI6C180BV(2000) Просмотр технического описания (PDF) - Pericom Semiconductor
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PI6C180BV Datasheet PDF : 7 Pages
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PI6C180B
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DC Operating Specifications (VDD = +3.3V ±5%, TA = 0°C 70°C)
Symbol
Parameter
Test Condition Min.
Max. Units
Input Voltage
VIH Input high voltage
VIL Input low voltage
VDD
2.0 VDD +0.3
V
VSS -0.3
0.8
IIL
Input leakage current
0 < VIN < VDD 5
+5
mA
VDD[0-9] = 3.3V ±5%
VOH Output high voltage
VOL Output low voltage
IOH = 1mA
2.4
V
IOL = 1mA
0.4
COUT
CIN
Output pin capacitance
Input pin capacitance
6
pF
5
LPIN Pin Inductance
7
nH
TA Ambient Temperature
No Airflow
0
70
°C
SDRAM Clock Buffer Operating Specification
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
IOHMIN
Pull-up current
IOHMAX
Pull-up current
IOLMIN
Pull-down current
IOLMAX
Pull-down current
tRHSDRAM
Output rise edge rate
SDRAM only
tTHSDRAM
Output fall edge rate
SDRAM only
VOUT = 2.0V 40
VOUT = 3.135V
VOUT = 1.0V
40
VOUT = 0.4V
3.3V ±5%
@04V-2.4V
1.5
3.3V ±5%
@2.4V-0.4V
1.5
36 mA
38
4
V/ns
4
AC Timing
Symbol
Parameter
66 MHz
100 MHz 133 MHz
Units
Min. Max. Min. Max. Min. Max.
tSDKP
tSDKH
tSDKL
tSDRISE
tSDFALL
tPLH
tPHL
tPZL,tPZH
tPLZ,tPHZ
Duty Cycle
SDRAM CLK period
SDRAM CLK high time
SDRAM CLK low time
SDRAM CLK rise time
SDRAM CLK fall time
SDRAM Buffer LH prop delay
SDRAM Buffer HL prop delay
SDRAM Buffer Enable delay
SDRAM Buffer Disable delay
Measured at 1.5V
15.0 15.5 10.0 10.5 7.5
5.6
3.3
1.0
5.3
3.1
1.0
1.5 4.0 1.5 4.0 1.5
1.5 4.0 1.5 4.0 1.5
1.0 5.5 1.0 5.5 1.0
1.0 5.5 1.0 5.5 1.0
1.0 8.0 1.0 8.0 1.0
1.0 8.0 1.0 8.0 1.0
45 55 45 55 45
7.8
ns
4.0
V/ns
4.0
5.5
5.5
ns
8.0
8.0
55 %
tSDSKW
SDRAM Output to Output Skew
250
250
250 ps
4
PS8468 05/03/00
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