PHB3N40E Просмотр технического описания (PDF) - Philips Electronics

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PHB3N40E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

10.3 max

Product specification

PHP3N40E, PHB3N40E, PHD3N40E

4.5 max

1.4 max

11 max

15.4

2.5

0.85 max

0.5

(x2)

2.54 (x2)

Fig.20. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.21. SOT404 : soldering pattern for surface mounting.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

December 1998

8

Rev 1.200

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