PHB3N40E Просмотр технического описания (PDF) - Philips Electronics
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PHB3N40E Datasheet PDF : 10 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
100 Drain current, ID (Amps)
Tmb = 25 C
PHP2N40
10
RDS(ON) = VDS/ID
1
DC
tp =
10 us
100us
1 ms
10 ms
0.1
10
100ms
100
Drain-source voltage, VDS (Volts)
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Product specification
PHP3N40E, PHB3N40E, PHD3N40E
10 Zth j-mb / (K/W)
D=
1
0.5
0.2
0.1
0.05
0.1
0.02
0
0.01
10us
PD
1ms
t/s
tp
D
=
tp
T
T
t
0.1s
10ms
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
ID, Drain current (Amps)
8
Tj = 25 C
7
PHP2N40
20 V
6
10 V
7V
5
4
6.5 V
6V
3
5.5 V
2
5V
1
VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
Drain-Source on resistance, RDS(ON) (Ohms)
6
5V 5.5 V 6 V
6.5 V
5
PHP2N40
Tj = 25 C
7V
4
10 V
3
VGS = 20 V
2
1
0
0
1
2
3
4
5
6
7
8
Drain current, ID (Amps)
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
December 1998
4
Rev 1.200
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