P4C167 Просмотр технического описания (PDF) - Semiconductor Corporation
Номер в каталоге
Компоненты Описание
Список матч
P4C167 Datasheet PDF : 10 Pages
| |||
P4C167
AC CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
Parameter
–10
–12
–15
–20
–25
–35
–45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC
Write Cycle Time 10
12
15
20
25
35
45
ns
tCW
Chip Enable Time 8
10
2
15
20
25
30
ns
to End of Write
tAW
Address Valid to
8
10
12
15
20
25
30
ns
End of Write
tAS
Address Set-up
0
0
0
0
0
0
0
ns
Time
tWP
Write Pulse Width 8
10
12
15
20
25
30
ns
tAH
Address Hold Time 0
0
0
0
0
0
0
ns
from End of Write
tDW
Data Valid to End 6
7
10
13
15
20
25
ns
of Write
tDH
Data Hold Time
0
0
0
0
0
0
0
ns
tWZ
Write Enable to
Output in High Z
6
7
8
12
15
17
20 ns
tOW
Output Active from 0
0
0
0
0
0
0
ns
End of Write
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(9)
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
Document # SRAM106 REV A
Page 5 of 10
Share Link: 