P4C167 Просмотр технического описания (PDF) - Semiconductor Corporation
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P4C167 Datasheet PDF : 10 Pages
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P4C167
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
Parameter
–10
–12
–15
–20
–25
–35
–45
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit
tRC
Read Cycle Time 10
12
15
20
25
35
45
ns
tAA
Address Access
Time
10
12
15
20
25
35
45 ns
tAC
Chip Enable
Access Time
10
12
15
20
25
35
45 ns
tOH
Output Hold from
Address Change
2
2
2
2
2
2
2
ns
tLZ
Chip Enable to
Output in Low Z
2
2
2
2
2
2
2
ns
tHZ
Chip Disable to
Output in High Z
5
6
8
10
12
17
20 ns
tPU
Chip Enable to
Power Up Time
0
0
0
0
0
0
0
ns
tPD
Chip Disable to
Power Down Time
10
12
15
20
25
35
45 ns
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
TIMING WAVEFORM OF READ CYCLE NO. 2(6)
Notes:
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM106 REV A
Page 4 of 10
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