GLT6200L16L-55FG Просмотр технического описания (PDF) - G-Link Technology
Номер в каталоге
Компоненты Описание
Список матч
GLT6200L16L-55FG Datasheet PDF : 13 Pages
| |||
G-LINK
GLT6200L16
Ultra Low Power 128k x 16 CMOS SRAM
May 2001(Rev. 2.3)
DC Operating Characteristics ( Vcc=2.7 to 3.6V, TA = -25°C to 85°C )
Parameter
Sym.
Test Conditions
55
70
Min Max Min Max
Input Leakage Current
ILI VCC = Max,
Vin = Gnd to VCC
1
1
Output Leakage
Current
ILO
CE1 =VIH or VCC = Max,
VOUT = Gnd to VCC
1
1
Operating Power
ICC
CE1 =VIL ,VIN=VIH or VIL, IOUT=0
5
5
Supply Current
85
Unit
Min Max
1 µA
1 µA
5 mA
Average Operating
Current
ICC1 IOUT = 0mA,
Min Cycle, 100% Duty
ICC2
CE1 ≤ 0.2V
30
30
25 mA
3
3
3 mA
IOUT = 0mA,
Cycle Time=1µs, 100% = Duty
Standby Power Supply
Current(TTL Level)
ISB
CE1 =VIH
0.5
0.5
0.5 mA
Standby Power Supply
Current (CMOS Level)
ISB1
CE1 ≥ VCC-
GLT6200L16LL
10
10
10
µA
0.2V
VIN ≤ 0.2V or
2
2
2
VIN ≥ VCC-0.2V GLT6200L16SL
µA
Output Low Voltage
Output High Voltage
VOL IOL = 2.1 mA
VOH IOH = -1 mA
0.4
0.4
0.4 V
2.4
2.4
2.4
V
Data Retention
Parameter
VCC for Data retention
Data Retention Current
Chip Deselect to Data Retention Time
Operating Recovery Time(2)
Sym.
VDR
ICCDR
tCDR
tR
Test Conditions
CE1 ≥ VCC -0.2V
VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
Min.
1.0
-
0
tRC
Max.
-
2
-
-
Unit
V
µA
ns
ns
Data Retention Waveform (TA = -25°C to +85°C)
Vcc
2.7V
tCDR
Data Retention Mode
VDR >= 1.0V
CE1
VIH
VDR
2.7V
tR
VIH
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-4-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
Share Link: 