OC1005 Просмотр технического описания (PDF) - NXP Semiconductors.
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OC1005 Datasheet PDF : 12 Pages
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
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120
Ider
(%)
100
80
package limiting
60
current 75 A
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40
40
20
0
0
50
100
150
200
Tmb (°C)
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Ider = -I--D----(-I-2-D-5---°--C---) × 100 %
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS/ID
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tp = 10 µs
100 µs
DC
10
1 ms
10 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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