OC1005 Просмотр технического описания (PDF) - NXP Semiconductors.
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OC1005 Datasheet PDF : 12 Pages
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
OC1005
SC-46
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
ISM
peak source current
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDS ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; starting at Tj = 25 °C
Min
-
-
-
[1] -
-
-
-
−55
−55
[1] -
-
-
Max
55
55
±20
110
80
390
200
+175
+175
110
390
280
[1] Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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