NP100P06PLG Просмотр технического описания (PDF) - NEC => Renesas Technology

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NP100P06PLG

SWITCHING P-CHANNEL POWER MOSFET

NEC => Renesas Technology 

NP100P06PLG

PACKAGE DRAWING (Unit: mm)

TO-263 (MP-25ZP)

No plating

10.0 ±0.3

7.88 MIN.

4

0.5

4.45 ±0.2

1.3 ±0.2

0.025

to 0.25

0.75 ±0.2

2.54

12 3

0.6 ±0.2

0 to 8˚

0.25

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

6

Data Sheet D18695EJ3V0DS

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