NP100P06PLG Просмотр технического описания (PDF) - NEC => Renesas Technology
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NP100P06PLG Datasheet PDF : 7 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
VGS = −4.5 V
8
6
−10 V
4
2
0
-75
ID = −50 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(off)
100
tf
tr
td(on)
10
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1
-1
-10
-100
ID - Drain Current - A
-1000
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
VGS = −10 V
0V
-10
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP100P06PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60
-12
-50
VDD = −48 V
−30 V
-10
−12 V
-40
-8
-30
-6
-20
VGS
-4
-10
0
0
-2
VDS
ID = −100 A
-0
50 100 150 200 250 300 350
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18695EJ3V0DS
5
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