NLX2G66MU3TCG(2016) Просмотр технического описания (PDF) - ON Semiconductor
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NLX2G66MU3TCG Datasheet PDF : 11 Pages
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NLX2G66
Table 4. SWITCHING CHARACTERISTICS
Symbol
tPLH, tPHL
Parameter
Propagation Delay,
A to B, B to A
tEN
(tPZL, tPZH)
Enable Time,
C to Analog Output (A or B)
Condition
CL = 30 pF, RL = 1 kΩ
CL = 50 pF, RL = 500 Ω
CL = 50 pF, RL = 500 Ω
See Figure 6
tDIS
(tPLZl, tPHZ)
Disable Time,
C to Analog Output (A or B)
CL = 50 pF, RL = 500 Ω
See Figure 6
Table 5. ANALOG SWITCH CHARACTERISTICS
Symbol
RON
Parameter
On−Resistance
RON(peak) Peak On−Resistance
DRON
On−Resistance
Mismatch between
Switches
BW
Bandwidth (f−3dB)
Conditions
VIS = VCC or GND,
VI = VIH, See Figure 2
VIS = GND to VCC; VI = VIH,
See Figure 2
VIS = GND to VCC; VI = VIH,
See Figure 2
RL = 50 W, CL = 5 pF,
fIN = Sine Wave
See Figure 8
IS = 4 ma
IS = 8 ma
IS = 24 ma
IS = 32 ma
IS = 4 ma
IS = 8 ma
IS = 24 ma
IS = 32 ma
IS = 4 ma
IS = 8 ma
IS = 24 ma
IS = 32 ma
Guaranteed Limit
−555 to 1255C
VCC
Min
Max
Unit
1.8
6.5
ns
2.5
3.3
3.3
2.5
5.0
2.2
1.8
10
ns
2.5
6.5
3.3
5.5
5.0
4.9
1.8
9.0
ns
2.5
7.2
3.3
6.5
5.0
6.0
255C
VCC
Typ
1.65
12
2.3
9
3.0
7.5
4.5
5.5
1.65 74.5
2.3
20
3.0
11.5
4.5
7.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
−555 to 1255C
Min
Max
30
20
15
13
220
75
25
17
8.0
5.0
3.0
2.0
> 270
> 270
> 270
> 270
Unit
W
W
W
MHz
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