MT3S05T Просмотр технического описания (PDF) - Toshiba
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MT3S05T Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S05T
MT3S05T
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Suitable for use in an OSC
• Low noise figure
NF = 1.4dB
• Excellent collector current linearity
|S21e|2 = 8.5dB (@1 V/5 mA/1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
VCBO
10
V
VCEO
5
V
VEBO
2
V
IC
40
mA
IB
10
mA
PC
100
mW
Tj
125
°C
JEDEC
―
Storage temperature range
Tstg
−55~125
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-1B1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 2.2 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
TK
1
2
1
2007-11-01
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