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MSM56V16800F

2-Bank x 1,048,576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

Semiconductor

This version : Dec.1999

MSM56V16800F

2-Bank ´ 1,048,576 Word ´ 8 Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s

CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL

compatible.

FEATURES

· Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell

· 2-bank ´ 1,048,576-word ´ 8bit configuration

· 3.3V power supply ± 0.3V tolerance

· Input : LVTTL compatible

· Output : LVTTL compatible

· Refresh : 4096 cycles/64 ms

· Programmable data transfer mode

- CAS Latency (1,2,3)

- Burst Length (1,2,4,8,Full page)

- Data scramble (sequential , interleave)

· CBR auto-refresh, Self-refresh capability

· Package:

44-pin 400mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800F-xxTS-K)

xx : indicates speed rank.

PRODUCT FAMILY

Family

MSM56V16800F-8A

MSM56V16800F-8

MSM56V16800F-10

Max.

Frequency

125MHz

125MHz

100MHz

Access Time (Max.)

tAC2

6ns

tAC3

6ns

9ns

6ns

9ns

9ns

1/30

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