T15N1M16A-70J Просмотр технического описания (PDF) - Taiwan Memory Technology
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T15N1M16A-70J Datasheet PDF : 13 Pages
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tm TE
CH
T15N1M16A
AC CHARACTERISTICS(Vcc=+2.4 to 3.6V , Vss = 0V, Ta = 0 to +70°C / -40 to +85 °C)
(1) READ CYCLE
PARAMETER
SYM.
Read Cycle Time
tRC
Address Access Time
tAA
Chip Enable Access Time
tACE
Output Enable Access Time
tOE
Output Hold from Address Change
tOH
Chip Enable to Output in Low-Z
tLZ
Chip Disable to Output in High-Z
tHZ
Output Enable to Output in Low-Z
tOLZ
Output Disable to Output in High-Z
tOHZ
LB , UB Access Time
tBA
LB , UB Enable to Output in Low-Z tBLZ
LB , UB Disable to Output in High-Z tBHZ
-55
Min Max
55
-
-
55
-
55
-
25
10
-
10
-
-
20
5
-
-
20
-
55
10
-
-
20
-70
Min Max
70
-
-
70
-
70
-
35
10
-
10
-
-
25
5
-
-
25
-
70
10
-
-
25
-100
Min Max
100
-
-
100
-
100
-
50
10
-
10
-
-
25
5
-
-
25
-
100
10
25
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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ns
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Enable to Write End
Address Valid to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
LB , UB Setup to Write End
SYM.
tWC
tCW
tAW
tAS
tWP
tWR
tDW
tDH
tWHZ
tOW
tBW
-55
Min Max
55
-
45
-
45
-
0
-
40
-
0
-
25
-
0
-
0
20
5
-
45
-
-70
Min Max
70
-
60
-
60
-
0
-
50
-
0
-
30
-
0
-
0
20
5
-
60
-
-100
Min Max
100
-
80
-
80
-
0
-
70
-
0
-
40
-
0
-
0
30
5
-
80
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TM Technology Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: JUL . 2002
Revision: A
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