T15N1M16A-70J Просмотр технического описания (PDF) - Taiwan Memory Technology

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T15N1M16A-70J

64K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

DATA RETENTION CHARACTERISTICS

T15N1M16A

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention

Time

Operation Recovery Time

SYM.

VDR

ICCDR

tCDR

tR

TEST CONDITION

CE ≥ VCC -0.2V

VIN ≥ Vcc -0.2V or

VIN ≤ 0.2V

Vcc=3.0V

MIN.

1.5

-

0

tRC

MAX.

-

10

-

-

UNIT

V

uA

ns

ns

DATA RETENTION WAVEFORM

(Ta = 0°C to +70° / -40°C to +85 °C)

TM Technology Inc. reserves the right

P. 10

to change products or specifications without notice.

Publication Date: JUL. 2002

Revision: A

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