LX5512E(2004) Просмотр технического описания (PDF) - Microsemi Corporation

Номер в каталоге

Компоненты Описание

Список матч

LX5512E
(Rev.:2004)

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

Microsemi Corporation 

LX5512E

TM

®

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

PRODUCTION DATA SHEET

DESCRIPTION

The LX5512E is a power amplifier For 19dBm OFDM output power

optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a

the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of

PA is implemented as a three-stage 3 %, and consumes 130 mA total DC

monolithic microwave integrated current.

circuit (MMIC) with active bias and The LX5512E is available in a 16-pin

input/output pre-matching. The device 3mmx3mm micro-lead package (MLP).

is manufactured with an InGaP/GaAs The compact footprint, low profile, and

Heterojunction Bipolar Transistor excellent thermal capability of the MLP

(HBT) IC process (MOCVD). It package makes the LX5512E an ideal

operates at a single low voltage supply solution for high-gain power amplifier

of 3.3V with 34 dB power gain requirements for IEEE 802.11b/g

between 2.4-2.5GHz, at a low applications.

quiescent current of 50 mA.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATURES

ƒ Advanced InGaP HBT

ƒ 2.4 – 2.5GHz Operation

ƒ Single-Polarity 3.3V Supply

ƒ Low Quiescent Current Icq

~50mA

ƒ Power Gain ~34dB @ 2.45GHz

and Pout = 19dBm

ƒ Total Current 130mA for Pout =

19dBm @ 2.45GHz OFDM

ƒ EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

ƒ Small Footprint (3 x 3 mm2)

ƒ Low Profile (0.9mm)

APPLICATIONS

ƒ IEEE 802.11b/g

PRODUCT HIGHLIGHT

Copyright  2000

Rev. 1.2, 2004-01-16

PACKAGE ORDER INFO

Plastic MLPQ

LQ 16 pin

LX5512E-LQ

Note: Available in Tape & Reel.

Append the letter “T” to the part number.

(i.e. LX5512E-LQT)

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

Share Link: