LX1692B Просмотр технического описания (PDF) - Microsemi Corporation
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LX1692B Datasheet PDF : 13 Pages
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LX1692B
TM
®
Full Bridge Resonant CCFL Controller
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature -20°C ≤ TA ≤ 70°C except where
otherwise noted and the following test conditions:.
Parameter
Symbol
Test Conditions
` POWER
Power Supply Input Voltage
VDDP
Power Supply Output Voltage
VDD_A VDDP = 4.5V to 5.5V, I Load = 5 mADC
VDDP Operating Current
VDDP Operating Current
` ENABLE INPUT
ISB
fLAMP = 62.5kHz, TA=25°C
IBB
CAOUT = CBOUT= CCOUT = CDOUT=2000pF,
fLAMP = 62.5kHz
ENABLE Logic Threshold
ENABLE threshold Hysteresis
ENABLE High
ENABLE Low
Sleep Mode Current
Input Resistance
` UNDER VOLTAGE LOCKOUT
VTH_EN
VH_EN
VEN_HIGH
VEN_LOW
IDD_SLEEP
RENR
VENABLE = 0V
UVLO Threshold VDDP
UVLO Hysteresis
` BRIGHTNESS CONTROL
VTH_UVLO_P Rising edge
VH_UVLO
BRITE_A Voltage Range
VR_BR_A
Full Brightness BRITE_A Input
VBR_FULL _A VR_BR_D = VDDA, TA=25°C
Full Darkness BRITE_A Input
VDARK_FULL_A VR_BR_D = VDDA
Full Darkness BRITE_A input Offset VDARKFULL_OS VR_BR_D = VDDA, BRITE_A = 0V
BRITE_D Voltage Range
VR_BR_D
VR_BR_A = VDDA
Full Brightness BRITE_D Input
VBR_FULL _D VR_BR_A = VDDA, TA=25°C
Full Darkness BRITE_D Input
` BURST RAMP GENERATOR
VDARK_FULL_D VR_BR_A = VDDA
Ramp Valley Voltage
Ramp Peak Voltage
Ramp Frequency
Burst Duty Cycle Range
VRVV
VRPV
FRAMP
C_BST = 10nF, I_R = 40K, Ta=25°C
BRITE_D to DIMPWM Jitter
Burst PWM min Duty Resolution
` LAMP FREQUENCY GENERATOR
JBDD
DRBST
C_BST = 10nF, BRITE_D = 2.4V
Lamp Frequency Range
Lamp Ramp Frequency
FLAMP
FLAMP
Lamp Ignited, Run Mode, TA = 25°C, I_R = 40K,
C_R = 100pF
Lamp Ramp Frequency Regulation
FLAMP_REG
4.5 > VDDP < 5.5V, TA = 25°C
VDDP = 5.5V
Ramp Valley Voltage
Ramp Peak Voltage
Ramp PWM Jitter
` VIN_SNS RAMP
VLRVV
VLRPV
LFJ
Ramp Peak Clamp Voltage
VRPCV
VIN = 8V, C_P = C_R = 100pF, R_P = 100K
VDDP = 5V
VIN_SNS Discharge Current
IVRVV
LX1692B
Units
Min Typ Max
4.5
5.5
V
3.8
4.0
4.2
V
3.8
5.3
6.8
mA
10
15
mA
1.6 1.85 2.0
V
500
mV
2.4
VDDP V
0
0.8
V
20
50
µA
100
KΩ
3.8
4.2
V
200
mV
0
VDDP V
1.9
2
2.1
V
0
V
0.35 0.45 0.55
V
0.4
VDDP V
2.37
2.5
2.63
V
0.43 0.55 0.67
V
0.43 0.55 0.67
V
2.37
2.5
2.63
V
230
250
270
Hz
0
100
%
1
3
µs
1
%
30
150 kHz
59.3 62.5 65.7 kHz
±0.5 % / V
±0.1 %/°C
0.2
V
2.0
V
1
µs
5
VDDP
+0.9
V
7
12.5
18
mA
Copyright © 2005
Rev. 1.1, 12/20/2006
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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