IRF510 Просмотр технического описания (PDF) - Intersil
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IRF510 Datasheet PDF : 7 Pages
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IRF510
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS ≈ CDS + CGD
300
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
CISS
COSS
100
0
1
CRSS
2
5
10
2
5
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VDS ≥ 50V
TJ = 25oC
1.5
TJ = 175oC
1.0
0.5
0
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 175oC
1
TJ = 25oC
0.1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 3.4A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
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