IRF510 Просмотр технического описания (PDF) - Intersil
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IRF510 Datasheet PDF : 7 Pages
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IRF510
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Test Conditions
Continuous Source to Drain Current
ISD
Modified MOSFET
Pulse Source to Drain Current
(Note 3)
ISDM
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
D
-
-
5.6
A
-
-
20
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs
-
-
2.5
V
4.6 96 200
ns
0.17 0.4 0.83
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
3
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