K4E641612D Просмотр технического описания (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : D OUT = O P E N

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

VIH -

LCAS

V IL -

V IH -

A

V IL -

VIH -

W

V IL -

V IH -

OE

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

VIH -

V IL -

t RC

tR A S

tCRP

tCRP

tRCD

tRAD

tASR

tR A H

ROW

ADDRESS

tASC

tCSH

tR S H

tCAS

t CAH

COLUMN

ADDRESS

t RAL

tC W L

tRWL

tW P

tOED

tOEH

tD S

tDH

DATA-IN

CMOS DRAM

tR P

tR P C

tC R P

D o n ′t care

Undefined

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