K4E641612D Просмотр технического описания (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

WORD WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : DOUT = OPEN

V IH -

RAS

V IL -

VIH -

UCAS

VIL -

V IH -

LCAS

V IL -

V IH -

A

V IL -

V IH -

W

V IL -

V IH -

OE

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

VIH -

V IL -

tRAS

tRC

tC R P

tRCD

tCSH

tR S H

tC A S

tC R P

tRCD

tASR

tRAD

tRAH

tASC

ROW

ADDRESS

tC S H

tR S H

t CAS

t CAH

COLUMN

ADDRESS

tR A L

tCWL

tR W L

tW P

tOED

tOEH

tDS

tDH

DATA-IN

tDS

tDH

DATA-IN

CMOS DRAM

tRP

tC R P

tC R P

D o n ′t c a r e

Undefined

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