HM628512BFP Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM628512BFP

4M SRAM (512-kword x 8-bit)

Hitachi -> Renesas Electronics 

HM628512BFP Series

AC Characteristics (Ta = –20 to +70°C, VCC = 5 V ± 10%, unless otherwise noted.)

Test Conditions

• Input pulse levels: 0.8 V to 2.4 V

• Input rise and fall time: 5 ns

• Input and output timing reference levels: 1.5 V

• Output load: 1 TTL Gate + CL (50 pF) (HM628512BFP-5) (Including scope & jig)

1 TTL Gate + CL (100 pF) (HM628512BFP-7) (Including scope & jig)

Read Cycle

Parameter

Read cycle time

Address access time

Chip select access time

Output enable to output valid

Chip selection to output in low-Z

Output enable to output in low-Z

Chip deselection to output in high-Z

Output disable to output in high-Z

Output hold from address change

Symbol

t RC

t AA

t CO

t OE

t LZ

t OLZ

t HZ

t OHZ

t OH

HM628512BFP

-5

-7

Min Max Min

55

—

70

—

55

—

—

55

—

—

25

—

10

—

10

5

—

5

0

20

0

0

20

0

10

—

10

Max

—

70

70

35

—

—

25

25

—

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

Notes

2

2

1, 2

1, 2

6

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