HM628512BFP Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM628512BFP

4M SRAM (512-kword x 8-bit)

Hitachi -> Renesas Electronics 

HM628512BFP Series

DC Characteristics (Ta = –20 to +70°C, VCC = 5 V ±10% , VSS = 0 V)

Parameter

Symbol Min Typ*1 Max Unit Test conditions

Input leakage current

|ILI|

—— 1

µA Vin = VSS to VCC

Output leakage current

|ILO|

—— 1

µA CS = VIH or OE = VIH or

WE = VIL, VI/O = VSS to VCC

Operating power supply current: DC ICC

—8

15

mA CS = VIL,

others = VIH/VIL, II/O = 0 mA

Operating power supply current

I CC1

— 40 60 mA Min cycle, duty = 100%

CS = VIL, others = VIH/VIL

II/O = 0 mA

Operating power supply current

I CC2

— 10 20 mA Cycle time = 1 µs,

duty = 100%

II/O = 0 mA, CS ≤ 0.2 V

VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V

Standby power supply current: DC ISB

—1 3

mA CS = VIH

Standby power supply current (1): DC ISB1

— 300 400 µA Vin ≥ 0 V, CS ≥ VCC – 0.2 V

Output low voltage

VOL

— — 0.4 V

IOL = 2.1 mA

Output high voltage

VOH

2.4 — — V

IOH = –1.0 mA

Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Typ

Max

Input capacitance*1

Cin

—

8

Input/output capacitance*1 CI/O

—

10

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

5

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