IRF7476PBF Просмотр технического описания (PDF) - International Rectifier

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IRF7476PBF

HEXFET Power MOSFET

International Rectifier 

IRF7476PbF

7.5

15.00

13.00

7.3

11.00

VGS = 4.5V

7.0

9.00

6.8

ID = 15A

7.00

6.5

0

20 40 60 80 100 120

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

5.00

2.0

4.0

6.0

8.0

10.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

400

ID

TOP

5.4A

9.6A

BOTTOM

12A

300

200

V(BR)DSS

tp

I AS

VDS

L

RG

20V

tp

D.U.T

IAS

0.01Ω

15V

DRIVER

+

-

VDD

A

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

6

100

0

25

50

75

100

125

150

Starting Tj, Junction Temperature (°C)

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

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