IRF7476PBF Просмотр технического описания (PDF) - International Rectifier

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IRF7476PBF

HEXFET Power MOSFET

International Rectifier 

IRF7476PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

12

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

0.6

–––

IDSS

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– ––– V

0.014 ––– V/°C

6.0 8.0 mΩ

12 30

––– 1.9 V

––– 100 µA

––– 250

––– 200

nA

––– -200

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 4.5V, ID = 15A ƒ

VGS = 2.8V, ID = 12A ƒ

VDS = VGS, ID = 250µA

VDS = 9.6V, VGS = 0V

VDS = 9.6V, VGS = 0V, TJ = 125°C

VGS = 12V

VGS = -12V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

31 ––– –––

––– 26 40

––– 4.6 –––

––– 11 –––

––– 17 –––

––– 11 –––

––– 29 –––

––– 19 –––

––– 8.3 –––

––– 2550 –––

––– 2190 –––

––– 450 –––

S VDS = 6.0V, ID = 12A

ID = 12A

nC VDS = 10V

VGS = 4.5V

VGS = 0V, VDS = 5.0V

VDD = 6.0V

ns ID = 12A

RG = 1.8Ω

VGS = 4.5V ƒ

VGS = 0V

VDS = 6.0V

pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

160

12

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

–––

0.87

0.73

55

59

54

60

Max.

2.5

120

1.2

–––

82

89

81

90

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 12A, VGS = 0V ƒ

TJ = 125°C, IS = 12A, VGS = 0V ƒ

TJ = 25°C, IF = 12A, VR=12V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 12A, VR=12V

di/dt = 100A/µs ƒ

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