IRF6662PBF Просмотр технического описания (PDF) - International Rectifier
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IRF6662PBF Datasheet PDF : 10 Pages
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1000
VGS = 0V
100
TJ = 150°C
TJ = 25°C
10
TJ = -40°C
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6662PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
10
7.0
ID = 100µA
8
6.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
6
5.0
4
4.0
2
3.0
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
160
140
120
100
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 1.6A
1.9A
BOTTOM 4.9A
80
60
40
20
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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