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Компоненты Описание

Список матч

IRF6662PBF

DirectFET™ Power MOSFET

International Rectifier 

IRF6662PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

BVDSS

Drain-to-Source Breakdown Voltage

100

∆ΒVDSS/∆TJ

Breakdown Voltage Temp. Coefficient –––

RDS(on)

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

3.0

∆VGS(th)/∆TJ

Gate Threshold Voltage Coefficient

–––

IDSS

Drain-to-Source Leakage Current

–––

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

gfs

Forward Transconductance

11

Qg

Total Gate Charge

–––

Qgs1

Pre-Vth Gate-to-Source Charge

–––

Qgs2

Post-Vth Gate-to-Source Charge

–––

Qgd

Gate-to-Drain Charge

–––

Qgodr

Gate Charge Overdrive

–––

Qsw

Switch Charge (Qgs2 + Qgd)

–––

Qoss

Output Charge

–––

RG

Gate Resistance

–––

td(on)

Turn-On Delay Time

–––

tr

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

tf

Fall Time

–––

Ciss

Input Capacitance

–––

Coss

Output Capacitance

–––

Crss

Reverse Transfer Capacitance

–––

Coss

Output Capacitance

–––

Coss

Output Capacitance

–––

Diode Characteristics

Parameter

Min.

IS

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

(Body Diode)

VSD

Diode Forward Voltage

–––

trr

Reverse Recovery Time

–––

Qrr

Reverse Recovery Charge

–––

Typ.

–––

0.10

17.5

3.9

-9.7

–––

–––

–––

–––

–––

22

4.9

1.2

6.8

9.1

8.0

11

1.2

11

7.5

24

5.9

1360

270

61

1340

160

Typ.

–––

–––

–––

34

50

Max.

–––

–––

22

4.9

–––

20

250

100

-100

–––

31

–––

–––

10

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Units

Conditions

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 8.2A

V VDS = VGS, ID = 100µA

mV/°C

µA VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

S VDS = 10V, ID = 4.9A

VDS = 50V

nC VGS = 10V

ID = 4.9A

See Fig. 15

nC VDS = 16V, VGS = 0V

Ω

VDD = 50V, VGS = 10V

ID = 4.9A

ns RG=6.2Ω

See Fig. 17

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, f=1.0MHz

VGS = 0V, VDS = 80V, f=1.0MHz

Max.

2.5

66

1.3

51

75

Units

Conditions

MOSFET symbol

D

A showing the

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 4.9A, VGS = 0V

ns TJ = 25°C, IF = 4.9A, VDD = 50V

nC di/dt = 100A/µs See Fig. 18

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

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