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IRF6678TR1

DirectFET Power MOSFET

International Rectifier 

IRF6678

D.U.T

+

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

+

Current Transformer

-

-

+

RG

• di/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

* VGS=10V

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

VDD

Re-Applied

Voltage

Body Diode

Inductoorr CCuurrernetnt

Forward Drop

Ripple ≤ 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET™ Substrate and PCB Layout, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

www.irf.com

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