IRF6622TR1 Просмотр технического описания (PDF) - International Rectifier

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IRF6622TR1

DirectFET Power MOSFET

International Rectifier 

IRF6622

1000

100

10

TOP

BOTTOM

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

1

2.5V

0.1

≤60µs PULSE WIDTH

Tj = 25°C

0.01

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1000

100

VDS = 15V

≤60µs PULSE WIDTH

TJ = 150°C

10 TJ = 25°C

TJ = -40°C

1

0.1

1

2

3

4

5

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

10000

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

4

1000

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

10

1

0.1

2.5V

≤60µs PULSE WIDTH

Tj = 150°C

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Output Characteristics

2.0

ID = 15A

VGS = 10V

1.5

1.0

VGS = 4.5V

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 7. Normalized On-Resistance vs. Temperature

50

TJ = 25°C

40

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

30

Vgs = 10V

20

10

0

0

20 40 60 80 100 120

ID, Drain Current (A)

Fig 9. Typical On-Resistance Vs.

Drain Current and Gate Voltage

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