IPDH5N03LA Просмотр технического описания (PDF) - Infineon Technologies
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IPDH5N03LA Datasheet PDF : 10 Pages
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Parameter
Symbol Conditions
IPDH5N03LA G IPSH5N03LA G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=25 A, R G=2.7 Ω
-
tf
-
2093
800
98
10
7.2
29
4.6
2653 pF
1064
147
14 ns
11
43
6.9
Q gs
-
6.7
9.0 nC
Q g(th)
-
3.3
4.2
Q gd
V DD=15 V, I D=25 A,
-
4.6
6.9
Q sw
V GS=0 to 5 V
-
8.0
11
Qg
-
17
22
V plateau
-
3.2
-V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
15
19 nC
Q oss
V DD=15 V, V GS=0 V
-
17
23
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
50 A
-
-
350
-
0.92
1.2 V
-
-
10 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2006-05-11
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