IPDH5N03LA Просмотр технического описания (PDF) - Infineon Technologies

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IPDH5N03LA

OptiMOS®2 Power-Transistor

Infineon Technologies 

OptiMOS®2 Power-Transistor

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC1) for target application

• N-channel, logic level

• Excellent gate charge x R DS(on) product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

IPDH5N03LA G IPSH5N03LA G

Product Summary

V DS

R DS(on),max (SMD version)

ID

25 V

5.2 mΩ

50 A

Type

IPDH5N03LA

IPSH5N03LA

Package

Marking

P-TO252-3-11

H5N03LA

P-TO251-3-11

H5N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

T C=25 °C2)

Pulsed drain current

I D,pulse

T C=100 °C

T C=25 °C3)

Avalanche energy, single pulse

E AS

I D=45 A, R GS=25 Ω

Reverse diode dv /dt

dv /dt

I D=50 A, V DS=20 V,

di /dt =200 A/µs,

T j,max=175 °C

Gate source voltage4)

V GS

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

Rev. 1.3

page 1

Value

50

50

350

225

6

±20

83

-55 ... 175

55/175/56

Unit

A

mJ

kV/µs

V

W

°C

2006-05-11

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