IDT7M1003S35C Просмотр технического описания (PDF) - Integrated Device Technology

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IDT7M1003S35C

128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE

Integrated Device Technology 

IDT7M1001/1003

128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

(VCC=5.0V ± 10%, TA = –55°C to +125°C and 0°C to +70°C)

Symbol

|ILI|

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage

(Address, Data & Other Controls)

Input Leakage

(CS and SEM)

Output Leakage

(Data)

Output Low Voltage

Output High Voltage

Test Conditions

VCC = Max.

VIN = GND to VCC

VCC = Max.

VIN = GND to VCC

VCC = Max.

CS ≥ VIH, VOUT = GND to VCC

VCC = Min. IOL = 4mA

VCC = Min. IOH = –4mA

IDT7M1001

Min.

Max.

—

80

—

10

—

80

—

0.4

2.4

—

IDT7M1003

Min. Max. Unit

—

40

µA

—

10

µA

—

40

µA

—

0.4

V

2.4

—

V

2804 tbl 07

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

GND to 3.0V

5ns

1.5V

1.5V

See Figures 1 and 2

2804 tbl 08

DATAOUT

255Ω

+5 V

480 Ω

30 pF*

DATAOUT

255Ω

+5 V

480 Ω

5 pF*

Figure 1. Output Load

2804 drw 04

*Including scope and jig.

Figure 2. Output Load

(for tCLZ, tCHZ, tOLZ. tOHZ, tWHZ, tOW)

2804 drw 05

7.5

4

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