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IDT49FCT805BT/CT Просмотр технического описания (PDF) - Integrated Device Technology

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IDT49FCT805BT/CT
IDT
Integrated Device Technology IDT
IDT49FCT805BT/CT Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
VTERM(2) Terminal Voltage
with Respect to
GND
VTERM(3) Terminal Voltage
with Respect to
GND
TA
Operating
Temperature
TBIAS Temperature
Under Bias
TSTG Storage
Temperature
Commercial
–0.5 to +7.0
–0.5 to VCC
+0.5
0 to +70
–55 to +125
–55 to +125
Military
–0.5 to +7.0
–0.5 to VCC
+0.5
–55 to +125
–65 to +135
–65 to +150
Unit
V
V
°C
°C
°C
IOUT
DC Output
–60 to +120 –60 to +120 mA
Current
NOTES:
2920 lnk 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals.
3. Output and I/O terminals.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter(1) Conditions Typ. Max. Unit
CIN
Input
Capacitance
VIN = 0V
4.5 6.0 pF
COUT Output
VOUT = 0V 5.5 8.0 pF
Capacitance
NOTE:
2920 lnk 04
1. This parameter is measured at characterization but not tested.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2) Max. Unit
VIH
Input HIGH Level
Guaranteed Logic HIGH Level
2.0
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
— 0.8
V
II H
Input HIGH Current(5)
II L
Input LOW Current(5)
VCC = Max.
VCC = Max.
VI = 2.7V
VI = 0.5V
±1
µA
±1
µA
IOZH
IOZL
II
High Impedance Output Current
(3-State Output pins)(5)
Input HIGH Current(5)
VCC = Max.
VO = 2.7V
VO = 0.5V
VCC = Max., VI = VCC (Max.)
±1
µA
±1
µA
±1
µA
VIK
Clamp Diode Voltage
IOS
Short Circuit Current
VCC = Min., IIN= –18mA
VCC = Max.(3), VO = GND
— –0.7 –1.2 V
–60 –120 –225 mA
VOH
Output HIGH Voltage
VCC = Min.
IOH = –12mA MIL.
2.4 3.3 —
V
VIN = VIH or VIL
IOH = –15mA COM'L.
IOH = –24mA MIL.
2.0 3.0 —
IOH = –32mA COM'L.(4)
VOL
Output LOW Voltage
VCC = Min.
IOL = 32mA MIL.
— 0.3 0.55 V
VIN = VIH or VIL
IOL = 48mA COM'L.
IOFF
Input/Output Power Off Leakage(5) VCC = 0V, VIN or VO 4.5V
±1
µA
VH
Input Hysteresis for all inputs
— 150 — mV
ICCL
Quiescent Power Supply Current VCC = Max., VIN = GND or VCC
5 500
ICCH
ICCZ
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is ± 5µA at TA = –55°C.
µA
2920 lnk 05
9.2
3

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