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ICSSSTUB32864A Просмотр технического описания (PDF) - Integrated Device Technology

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ICSSSTUB32864A
IDT
Integrated Device Technology IDT
ICSSSTUB32864A Datasheet PDF : 12 Pages
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ICSSSTUB32864A
Advance Information
Timing Requirements
(over recommended operating free-air temperature range, unless otherwise noted)
SYMBOL
PARAMETERS
MIN MAX
fclock
tW
tACT
tINACT
Clock frequency
Pulse duration, CK, CK High or Low
Differential inputs active time (See notes 1 and 2)
Differential inputs inactive time (See notes 1 and 3)
DCS before CK, CK,
410
1
10
15
Setup time
CSR high; CSR before
0.6
CK, CK, DCS high
tSU Setup time
DCS before CK, CK,
CSR Low
0.5
DODT, DCKE and data
before CK, CK
0.5
th Hold time
DCS, DODT, DCKE and
data after CK, CK
0.4
PAR_IN after CK, CK
0.4
Notes: 1 - Guaranteed by design, not 100% tested in production.
2 - For data signal input slew rate of 1V/ns.
3 - For data signal input slew rate of 0.5V/ns and < 1V/ns.
4 - CLK/CLK# signal input slew rate of 1V/ns.
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
Switching Characteristics
(over recommended operating free-air temperature range, unless otherwise noted)
SYMBOL
From
(Input)
To
(Output)
VDD = 1.8V ±0.1V
MIN
TYP MAX
UNITS
fmax
410
MHz
tPDM1 CLK, CLK#
Q
1.1
tPDMSS2 CLK, CLK#
Q
tphl RESET#
Q
Notes: 1. Includes 350ps test-load transmission-line delay
1.5
ns
1.6
3
ns
2. Guaranteed by design, not 100% tested in production.
Output Buffer Characteristics
Output edge rates over recommended operating free-air temperature range (See figure 7)
PARAMETER
VDD = 1.8V ± 0.1V
MIN
MAX
UNIT
dV/dt_r
1
4
V/ns
dV/dt_f
1
4
dV/dt_1
1
V/ns
V/ns
1. Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate)
1166—10/05/05
8

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