HMC797 Просмотр технического описания (PDF) - Hittite Microwave
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HMC797 Datasheet PDF : 10 Pages
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v02.1011
HMC797
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Second Harmonics vs.
Idd @ Pout = 18 dBm
70
60
3
50
40
300 mA
350 mA
400 mA
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
Second Harmonics vs. Pout
70
+12 dBm
60
+14 dBm
+16 dBm
+18 dBm
50
+20 dBm
+22 dBm
+24 dBm
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+12 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd -6.5V) to 4.5V. For
Vdd <8.5V, Vgg2 must remain >2V
RF Input Power (RFIN)
+27 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
14.5 °C/W
Output Power into VSWR >7:1 29 dBm
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+9
+10
+11
Idd (mA)
400
400
400
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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