HMC757 Просмотр технического описания (PDF) - Hittite Microwave

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HMC757

GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz

Hittite Microwave 

v00.0409

3

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)

Junction Temperature

Continuous Pdiss (T= 85 °C)

(derate 43 mW/°C above 85 °C)

Thermal Resistance

(junction to die bottom)

Storage Temperature

Operating Temperature

8V

+26 dBm

150 °C

2.8 W

23.4 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC757

GaAs pHEMT MMIC 1/2 WATT

POWER AMPLIFIER, 16 - 24 GHz

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

+6.5

375

+7.0

395

+7.5

411

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 395mA at +7V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

3-5

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND PAD IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

8. Overall die size ± .002

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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