HMC757 Просмотр технического описания (PDF) - Hittite Microwave
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HMC757 Datasheet PDF : 8 Pages
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v00.0409
Typical Applications
The HMC757 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC757
GaAs pHEMT MMIC 1/2 WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: +30 dBm @ 30% PAE
High Output IP3: +37 dBm
High Gain: 22 dB
DC Supply: +7V @ 395mA
50 Ohm Matched Input/Output
Die Size: 2.4 x 0.9 x 0.1 mm
General Description
The HMC757 is a three stage GaAs pHEMT MMIC
1/2 Watt Power Amplifier which operates between 16
and 24 GHz. The HMC757 provides 22 dB of gain,
and +30 dBm of saturated output power at 30% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
in a 50 Ohm test fixture connected via 0.025 mm (1
mil) diameter wire bonds of length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 395mA[1]
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
16 - 20
Gain
19
22
21
Gain Variation Over Temperature
0.028
Input Return Loss
10
Output Return Loss
15
Output Power for 1 dB Compression (P1dB)
27
29
27
Saturated Output Power (Psat)
30
Output Third Order Intercept (IP3)[2]
38
Total Supply Current (Idd)
395
[1] Adjust Vgg between -2 to 0V to achieve Idd= 395mA typical.
[2] Measurement taken at +7V @ 395mA, Pout / Tone = +17 dBm
Typ.
20 - 24
24
0.032
12
13
29.5
30
36
395
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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