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HM628512B

4 M SRAM (512-kword x 8-bit)

Hitachi -> Renesas Electronics 

HM628512B Series

DC Characteristics (Ta = –20 to +70°C, VCC = 5 V ±10% , VSS = 0 V)

Parameter

Symbol Min Typ*1 Max Unit Test conditions

Input leakage current

|ILI|

Output leakage current

|ILO|

Operating power supply current: DC ICC

Operating power supply current

I CC1

Operating power supply current

I CC2

Standby power supply current: DC ISB

Standby power supply current (1): DC ISB1

—— 1

µA Vin = VSS to VCC

—— 1

µA CS = VIH or OE = VIH or

WE = VIL, VI/O = VSS to VCC

—8

15

mA CS = VIL,

others = VIH/VIL, II/O = 0 mA

— 40 60

mA Min cycle, duty = 100%

CS = VIL, others = VIH/VIL

II/O = 0 mA

— 10 20

mA Cycle time = 1 µs,

duty = 100%

II/O = 0 mA, CS ≤ 0.2 V

VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V

—1 3

mA CS = VIH

— 2*2 100*2 µA Vin ≥ 0 V, CS ≥ VCC – 0.2 V

— 2*3 50*3 µA

— 2*4 20*4 µA

Output low voltage

VOL

— — 0.4 V

IOL = 2.1 mA

Output high voltage

VOH

2.4 — — V

IOH = –1.0 mA

Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.

2. This characteristics is guaranteed only for L version.

3. This characteristics is guaranteed only for L-SL version.

4. This characteristics is guaranteed only for L-UL version.

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Typ

Max

Input capacitance*1

Cin

—

8

Input/output capacitance*1 CI/O

—

10

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

6

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