HFA04TB60S Просмотр технического описания (PDF) - Vishay Semiconductors
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HFA04TB60S Datasheet PDF : 7 Pages
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HFA04TB60S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 4 A
50
45
IF = 8 A
IF = 4 A
40
35
30
25 VR = 200 V
TJ = 125 °C
20 TJ = 25 °C
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
200
180
VR = 200 V
TJ = 125 °C
160 TJ = 25 °C
140
IF = 8 A
120
IF = 4 A
100
80
60
40
20
0
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
14
12
IF = 8 A
IF = 4 A
10
8
6
4
2
0
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
1000
IF = 8 A
IF = 4 A
100
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93033
Revision: 22-Oct-08
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