HFA04TB60S Просмотр технического описания (PDF) - Vishay Semiconductors
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HFA04TB60S Datasheet PDF : 7 Pages
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HFA04TB60S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 4 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
IF = 4.0 A
Maximum forward voltage
VFM
IF = 8.0 A
See fig. 1
IF = 4.0 A, TJ = 125 °C
Maximum reverse
leakage current
VR = VR rated
IRM
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
Junction capacitance
CT
VR = 200 V
See fig. 3
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4.0
8.0
MAX. UNITS
-
1.8
V
2.2
1.7
3.0
µA
300
8.0
pF
-
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
See fig. 5, 6
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
17
-
28
-
38
Peak recovery current
Reverse recovery charge
See fig. 7
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 4.0 A
dIF/dt = 200 A/µs
VR = 200 V
-
2.9
-
3.7
-
40
-
70
Peak rate of fall of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
280
-
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Tlead
RthJC
RthJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Weight
Marking device
Case style D2PAK
MIN.
-
-
-
-
-
TYP.
-
MAX.
300
UNITS
°C
-
5.0
K/W
-
80
2.0
-
g
0.07
-
oz.
HFA04TB60S
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93033
Revision: 22-Oct-08
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