HEF4516B Просмотр технического описания (PDF) - NXP Semiconductors.
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HEF4516B Datasheet PDF : 16 Pages
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NXP Semiconductors
HEF4516B
Binary up/down counter
a. Input waveforms
VI 90 %
tW
negative
pulse
VM
10 %
0V
tf
VI
positive
pulse
tr
90 %
VM
10 %
0V
tW
VM
tr
tf
VM
001aaj781
VDD
VI
G
VO
DUT
RT
CL
001aag182
b. Test circuit
Fig 8.
Test data is given in Table 9.
Definitions for test circuit:
DUT = Device Under Test
CL = Load capacitance including jig and probe capacitance;
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
Test circuit for measuring switching times
Table 9. Measurement points and test data
Supply voltage
Input
VI
5 V to 15 V
VDD
VM
0.5VI
tr, tf
≤ 20 ns
Load
CL
50 pF
HEF4516B_6
Product data sheet
Rev. 06 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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